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Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration by Jean Laconte,...
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Ubicado en: Santa Barbara, California, Estados Unidos
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N.º de artículo de eBay:381588634814
Última actualización el 11 abr 2025 14:06:53 H.EspVer todas las actualizacionesVer todas las actualizaciones
Características del artículo
- Estado
- Como nuevo
- Notas del vendedor
- “HARDCOVER”
- Product Type
- Textbook
- ISBN
- 9780387288420
Acerca de este producto
Product Identifiers
Publisher
Springer
ISBN-10
0387288422
ISBN-13
9780387288420
eBay Product ID (ePID)
48693068
Product Key Features
Number of Pages
Xiv, 292 Pages
Language
English
Publication Name
Micromachined Thin-Film Sensors for Soi-Cmos Co-Integration
Subject
Industrial Engineering, Mechanics / General, Materials Science / Thin Films, Surfaces & Interfaces, General, Sensors
Publication Year
2006
Type
Textbook
Subject Area
Technology & Engineering, Science
Format
Hardcover
Dimensions
Item Weight
47.3 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Intended Audience
Scholarly & Professional
LCCN
2006-279460
Dewey Edition
22
Number of Volumes
1 vol.
Illustrated
Yes
Dewey Decimal
621.3815/2
Table Of Content
Introduction: Context and motivations.- Introduction: Context and motivations.- Techniques and materials.- Silicon bulk micromachining with TMAH.- Thin dielectric films stress extraction.- Microsensors.- Low power microhotplate as basic cell.- Microheater based flow sensor.- Gas Sensors on microhotplate.- SOI-CMOS compatibility validation.- Conclusions and outlook.- Conclusions and outlook.
Synopsis
Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 µm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology., Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 m-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.
LC Classification Number
T1-995
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