Physics of Semiconductor Devices by Michael Shur (1990, Trade Paperback)
Check-inStore (698)
96,3% de votos positivos
Precio:
USD32,71
Aproximadamente27,92 EUR
+ USD10,39 de envío
Entrega prevista: mar. 14 oct. - mar. 4 nov.Entrega prevista: mar. 14 oct. - mar. 4 nov.
Devoluciones:
30 días para devoluciones. El comprador paga el envío de la devolución..
Estado:
NuevoNuevo
Physics of Semiconductor Devices by Michael Shur INTERNATIONAL EDITION. This is an Economy edition printed in South East Asia having same content but with different Cover Page and ISBN. Actual INTL ISBN: 9789353430061
Oops! Looks like we're having trouble connecting to our server.
Refresh your browser window to try again.
Acerca de este artículo
Product Identifiers
PublisherPrentice Hall PTR
ISBN-100136664962
ISBN-139780136664963
eBay Product ID (ePID)35098
Product Key Features
Number of Pages712 Pages
LanguageEnglish
Publication NamePhysics of Semiconductor Devices
Publication Year1990
SubjectElectronics / Semiconductors, Electronics / General, Physics / General
TypeTextbook
Subject AreaTechnology & Engineering, Science
AuthorMichael Shur
FormatTrade Paperback
Dimensions
Item Height1.5 in
Item Weight37.4 Oz
Item Length9.1 in
Item Width6.6 in
Additional Product Features
Edition Number1
Intended AudienceCollege Audience
LCCN89-022819
Dewey Edition20
IllustratedYes
Dewey Decimal537.6/22
Table Of Content1. Basic Semiconductor Physics. 2. p-n Junctions, Schottky Barrier Junctions, Heterojunctions and Ohmic Contacts. 3. Bipolar Junction Transistors. 4. Field Effect Transistors. 5. Photonic Devices. 6. Transferred-Electron Devices and Avalanche Diodes. 7. Novel Devices. APPENDICES: Physical Constants. Greek Alphabet. Units. Magnitude Prefixes. Unit Conversion Factors. Properties of Silicon. Properties of Germanium. Properties of Gallium Arsenide. Properties of Aluminum Gallium Arsendie. Properties of InP. Properties of InAs and In GaAs. Properties of HgCdTe. Properties of Diamond. Properties of SiC. Properties of ZnSe. Properties of ZnTe. Properties of Amorphous Silicon. Properties of SiO2. Properties of Si3N4. Hyperbolic Functions. Fermi Integrals. Overlap Factor and Scattering Rates. Momentum Relaxation Times and Low-Field Mobilities. Device and Circuit Simulation Programs. Relationship between h-parameters and Parameters of T-equivalent Circuit and ...P Equivalent Circuit. Data Sheets for Motorola 2N2219A General Purpose Silicon n-p-n Transistors. Periodic Table.
SynopsisThis volume provides a practical introduction to the basics of semiconductor physics as well as insights into important developments, such as amorphous silicon, compound semiconductor technologies, and novel heterostructure transistors., Appropriate for Sr or first year grad. courses on device physics. Theories and models presented in book are implemented in microcomputer programs used for modelling these devices. Includes over 150 problems. (vs. Sze, Muller/Kamins, Wang).